Temperature Dependence of Hot-Carrier-Induced Degradation in 0.1 m SOI nMOSFETs With Thin Oxide
نویسندگان
چکیده
This letter investigates hot-carrier-induced degradation on 0.1 m partially depleted silicon-on-insulator (SOI) nMOSFETs at various ambient temperatures. The thermal impact on device degradation was investigated with respect to body-contact nMOSFETs (BC-SOI) and floating-body SOI nMOSFETs (FB-SOI). Experimental results show that hot-carrier-induced degradation on drive capacity of FB-SOI devices exhibits inverse temperature dependence compared to that of BC-SOI devices. This is attributed to the floating-body effect (FBE) and parasitic bipolar transistor (PBT) effect.
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Hot-Carrier-Induced Degradation for Partially Depleted SOI 0.25–0.1 m CMOSFET With 2-nm Thin Gate Oxide
Hot-carrier-induced degradation of partially depleted SOI CMOSFETs was investigated with respect to body-contact (BC-SOI) and floating-body (FB-SOI) for channel lengths ranging from 0.25 down to 0.1 m with 2 nm gate oxide. It is found that the valence-band electron tunneling is the main factor of device degradation for the SOI CMOSFET. In the FB-SOI nMOSFET, both the floating body effect (FBE) ...
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